日盲紫外探测器在**和民用领域均具有广阔的应用前景。基于宽禁带半导体材料的日盲紫外探测器具有无需昂贵的滤光片、工作电压低、全固态、体积小、重量轻、抗干扰能力强、工作温度范围广等特点，是公认的新一代紫外探测器。在众多的宽禁带半导体材料中，以Ga₂O₃作为典型代表的镓基氧化物材料因其优异的电学和光电特性已经成为近年来微电子学和光电子学领域的研究热点，特别是其本征日盲、耐高温、耐高压、化学稳定性好等优异特点使得该类材料在日盲紫外光电探测领域展现出巨大的发展潜力。鉴于此，本文综述了不同晶体结构的Ga₂O₃、镓酸盐氧化物、镓锡氧化物、镓铝氧化物等镓基氧化物薄膜及其日盲紫外探测器研究进展。

The collective oscillation of electrons located in the conduction band of metal nanostructures being still energized, with the energy up to the bulk plasmon frequency, are called nonequilibrium hot electrons. It can lead to the state-filling effect in the energy band of the neighboring semiconductor. Here, we report on the incandescent-type light source composed of Au nanorods decorated with single Ga-doped ZnO microwire (AuNRs@ZnO:Ga MW). Benefiting from Au nanorods with controlled aspect ratio, wavelength-tunable incandescent-type lighting was achieved, with the dominating emission peaks tuning from visible to near-infrared spectral regions. The intrinsic mechanism was found that tunable nonequilibrium distribution of hot electrons in ZnO:Ga MW, injected from Au nanorods, can be responsible for the tuning emission features. Apart from the modification over the composition, bandgap engineering, doping level, etc., the realization of electrically driving the generation and injection of nonequilibrium hot electrons from single ZnO:Ga MW with Au nanostructure coating may provide a promising platform to construct electronics and optoelectronics devices, such as electric spasers and hot-carrier-induced tunneling diodes.